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tt8u2 1.5v drive pch mosfet + schottky barrier diode datasheet ll outline v dss -20v tsst8 r ds(on) (max.) 105m i d 2.4a p d 1.25w ll features ll inner circuit 1) pch mosfet and shottky barrier diode are put in tsst8 package. 2) high-speed switching and low on- resistance. 3) low voltage drive(1.5v) 4) built in low i r shottky barrier diode. ll packaging specifications type packing embossed tape ll application reel size (mm) 180 switching tape width (mm) 8 basic ordering unit (pcs) 3000 taping code tr marking u02 ll absolute maximum ratings (t a = 25c) < mosfet > parameter symbol value unit drain - source voltage v dss -20 v gate - source voltage v gss 10 v continuous drain current i d 2.4 a pulsed drain current i d, pulse *1 9.6 a continuous source current (body diode) i s -0.8 a pulsed source current (body diode) i s , pulse *1 -9.6 a power dissipation p d *2 1.0 w/element junction temperature t j 150 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 1/12 20150731 - rev.001 downloaded from: http:///
tt8u2 datasheet ll absolute maximum ratings (t a = 25c) < diode > parameter symbol value unit repetitive peak reverse voltage v rm 30 v reverse voltage v r 20 v forward current i f 1.0 a forward current surge peak i fsm *3 3.0 a power dissipation p d *2 1.0 w/element junction temperature t j 150 < mosfet + diode > parameter symbol value unit power dissipation p d *2 1.25 w/total range of storage temperature t stg -55 to +150 ll electrical characteristics (t a = 25c) < mosfet > parameter symbol conditions values unit min. typ. max. gate - source leakage current i gss v gs = 10v, v ds = 0v - - 100 na drain - source breakdown voltage v (br)dss v gs = 0v, i d = -1ma -20 - - v zero gate voltage drain current i dss v ds = -20v, v gs = 0v - - -1 a gate threshold voltage v gs(th) v ds = -10v, i d = -1ma -0.3 - -1.0 v static drain - source on - state resistance r ds(on) *4 v gs = -4.5v, i d = -2.4a - 80 105 m v gs = -2.5v, i d = -1.2a - 105 140 v gs = -1.8v, i d = -1.2a - 150 225 v gs = -1.5v, i d = -0.5a - 180 360 forward transfer admittance |y fs | *4 v ds = -10v, i d = -2.4a 2.4 - - s www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 2/12 20150731 - rev.001 downloaded from: http:///
tt8u2 datasheet ll electrical characteristics (t a = 25c) < mosfet > parameter symbol conditions values unit min. typ. max. input capacitance c iss v gs = 0v - 850 - pf output capacitance c oss v ds = -10v - 60 - reverse transfer capacitance c rss f = 1mhz - 50 - turn - on delay time t d(on) *4 v dd ? -10v, v gs = -4.5v - 9 - ns rise time t r *4 i d = -1.2a - 25 - turn - off delay time t d(off) *4 r l = 8.3 - 55 - fall time t f *4 r g = 10 - 45 - ll gate charge characteristics (t a = 25c) < mosfet > parameter symbol conditions values unit min. typ. max. total gate charge q g *4 v dd ? -10v, i d = -2.4a v gs = -4.5v - 6.7 - nc gate - source charge q gs *4 - 1.7 - gate - drain charge q gd *4 - 0.6 - ll body diode electrical characteristics (source-drain) (t a = 25c) < mosfet > parameter symbol conditions values unit min. typ. max. forward voltage v sd *4 v gs = 0v, i s = -2.4a - - -1.2 v www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 3/12 20150731 - rev.001 downloaded from: http:///
tt8u2 datasheet ll electrical characteristics (t a = 25c) < diode > parameter symbol conditions values unit min. typ. max. forward voltage v f i f = 1.0a - 0.48 0.52 v reverse current i r v r = 10v - - 10 a *1 pw Q 0s, duty cycle Q 1% *2 mounted on a ceramic board (30300.8mm) *3 60hz ? 1cycle *4 pulsed www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 4/12 20150731 - rev.001 downloaded from: http:///
tt8u2 datasheet ll electrical characteristic cur ves fig.1 typical output characteristics(i) fig.2 typica l output characteristics(ii) fig.3 breakdown voltage vs. junction temperature fig.4 typical transfer characteristics www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 5/12 20150731 - rev.001 downloaded from: http:///
tt8u2 datasheet ll electrical characteristic cur ves fig. 5 gate threshold voltage vs. junction temperature fig.6 forward transfer admittance vs. drain current fig.7 drain current derating curve fig.8 static drai n - source on - state resistance vs. gate source voltage www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 6/12 20150731 - rev.001 downloaded from: http:///
tt8u2 datasheet ll electrical characteristic cur ves fig. 9 static drain - source on - state resistance vs. junction temperature fig.10 static drain - source on - state resistance vs. drain current (i) www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 7/12 20150731 - rev.001 downloaded from: http:///
tt8u2 datasheet ll electrical characteristic cur ves fig.11 static drain - source on - state resistance vs. drain current (ii) fig.12 static drain - source on - state resistance vs. drain current (ili) fig.13 static drain - source on - state resistance vs. drain current (iv) fig.14 static drain - source on - state resistance vs. drain current (v) www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 8/12 20150731 - rev.001 downloaded from: http:///
tt8u2 datasheet ll electrical characteristic cur ves fig.1 5 t ypical capacitance vs. drain - source voltage fig.16 switching characteristics fig.17 dynamic input characteristics fig.18 source c urrent vs. source drain voltage www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 9/12 20150731 - rev.001 downloaded from: http:///
tt8u2 datasheet ll electrical characteristic cur ves < di> fig.1 9 reverse current vs. reverse voltage fig.20 forward current vs. forward voltage www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 10/12 20150731 - rev.001 downloaded from: http:///
tt8u2 datasheet ll me asurement circuits fig. 1-1 switching time measurement circuit fig. 1-2 swi tching waveforms fig. 2-1 gate charge measurement circuit fig. 2-2 ga te charge waveform ll notice 1. sbd has a large reverse leak current compared to other type of diode. therefore, it would raise a junction temperature, and increase a revers e power loss. further rise of inside temperature would cause a thermal runaway. this bui lt-in sbd has low v f characteristics and therefore, higher leak current. please consider enough the surrounding temperature, generating heat of mosfet and the reverse current. 2. this product might cause chip aging and breakdown under the large electrified environment. please consider to design esd protection circuit. www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 11/12 20150731 - rev.001 downloaded from: http:///
tt8u2 datasheet ll d i mensions www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 12/12 20150731 - rev.001 downloaded from: http:///
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